NDLI: Micron-sized, high aspect ratio bulk silicon micromechanical devices

Content Provider	IEEE Xplore Digital Library
Author	Gianchandani, Y. Najafi, K.
Copyright Year	1992
Description	Author affiliation: Center for Integrated Sensors & Circuits, Michigan Univ., Ann Arbor, MI, USA (Gianchandani, Y.; Najafi, K.)
Abstract	The fabrication of high-aspect-ratio microstructures having widths of approximately=1 mu m and thicknesses exceeding 10 mu m for application in a variety of microsensors and microactuators is reported. The fabrication process utilizes deep etching of fine features into boron-diffused bulk silicon wafers using chlorine- and fluorine-based reactive ion etching techniques. These wafers are then electrostatically bonded to glass wafers which have been previously patterned with metal interconnect. The wafers are finally etched in an ethylenediamine pyrocatechol solution that frees the microstructures. The process requires a total of three masking steps (two for silicon and one for glass), is single-sided, and has high yield. Structures with thickness-to-width ratios greater than 10:1 have been fabricated using this process. Electrical measurements have shown that very large deflections (>7 mu m) are possible at voltages as low as 25 V.
Starting Page	208
Ending Page	213
File Size	879068
Page Count	6
File Format	PDF
ISBN	0780304977
DOI	10.1109/MEMSYS.1992.187719
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1992-02-04
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Silicon Micromechanical devices Etching Fabrication Microstructure Glass Microsensors Microactuators Wafer bonding Electric variables measurement
Content Type	Text
Resource Type	Article

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