NDLI: Wet chemical etching mechanism of silicon

Content Provider	IEEE Xplore Digital Library
Author	Elwenspoek, M. Lindberg, U. Kok, H. Smith, L.
Copyright Year	1994
Description	Author affiliation: MESA Res. Inst., Twente Univ., Enschede, Netherlands (Elwenspoek, M.)
Abstract	We review what can be said on wet chemical etching of single crystals from the viewpoint of the science of crystal growth. Starting point is that there are smooth and rough crystal surfaces. The kinetics of smooth faces is controlled by a nucleation barrier that is absent on rough faces. The latter therefore etch faster by orders of magnitude. The analysis of the diamond crystal structure reveals that the {111} face is the only smooth face in this lattice-other faces might be smooth only because of surface reconstruction. In this way we explain the minimum of the etch rate in KOH:H/sub 2/O in the <001> direction. Two critical predictions concerning the shape of the minimum of the etch rate close to <001> and the transition from isotropic to anisotropic etching in HF:HNO/sub 3/ based solutions are tested experimentally. The results are in-agreement with the theory.
Starting Page	223
Ending Page	228
File Size	664905
Page Count	6
File Format	PDF
ISBN	0780318331
DOI	10.1109/MEMSYS.1994.555627
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1994-01-25
Publisher Place	Japan
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Chemicals Wet etching Silicon Rough surfaces Surface roughness Crystals Kinetic theory Surface reconstruction Shape Anisotropic magnetoresistance
Content Type	Text
Resource Type	Article

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