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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Jun Hyuk Park Guan-Bo Lin Dong Yeong Kim Jong Won Lee Jaehee Cho Schubert, E.F. Jong Kyu Kim |
| Copyright Year | 2015 |
| Description | Author affiliation: Dept. of Mater. Sci. & Eng., Pohang Univ. of Sci. & Technol. (POSTECH), Pohang, South Korea (Jun Hyuk Park; Dong Yeong Kim; Jong Won Lee; Jong Kyu Kim) || Semicond. Phys. Res. Center, Chonbuk Nat. Univ., Jeonju, South Korea (Jaehee Cho) || Dept. of Electr., Comput., & Syst. Eng., Rensselaer Polytech. Inst., Troy, NY, USA (Guan-Bo Lin; Schubert, E.F.) |
| Abstract | The efficiency of an AlGaN deep-ultraviolet light-emitting diode with peak emission wavelength of 285nm is investigated as a function of current over a wide range of temperatures (110K to 300K). We find that the efficiency-versus-current curve exhibits unique and distinct features over the entire temperature range including three points of inflection, a u-shape phenomenon which the efficiency increases again after the minimum, and higher low-temperature efficiency than room-temperature efficiency at high-current density regime. |
| Starting Page | 1 |
| Ending Page | 2 |
| File Size | 149512 |
| Page Count | 2 |
| File Format | |
| DOI | 10.1109/CLEOPR.2015.7376076 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2015-08-24 |
| Publisher Place | South Korea |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Light emitting diodes Temperature distribution Aluminum gallium nitride Wide band gap semiconductors Distance measurement Charge carrier processes Ionization |
| Content Type | Text |
| Resource Type | Article |
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