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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Currie, M. Dianat, P. Persano, A. Cola, A. Martucci, C. Quaranta, F. Nabet, B. |
| Copyright Year | 2012 |
| Description | Author affiliation: Opt. Sci. Div., Naval Res. Lab., Washington, DC, USA (Currie, M.; Nabet, B.) || ECE Dept., Drexel Univ., Philadelphia, PA, USA (Dianat, P.) || IMM Inst., Lecce, Italy (Persano, A.; Cola, A.; Martucci, C.; Quaranta, F.) |
| Abstract | GaAs grown by molecular beam epitaxy (MBE) at low, near 200°C, temperature (LT-GaAs) has become the material of choice for ultra high speed, such as THz, detection due to its very short, carrier lifetime of around 1 psec [1-3]. By contrast, regular temperature GaAs (RT-GaAs) is grown at around 600°C and has carrier lifetime of ~1nsec. This short lifetime requires that optically generated carriers be collected quickly, however, LT-GaAs has very low carrier mobilities thus resulting in low photocurrent and hence responsivity. We have previously designed a novel structure that circumvents this limitation [4] and have reported speed of response measured optoelectronically that was limited by instrumentation. Here, we present electro-optic sampling (EOS) time response data that shows while maintaining the high speed of response in LT-GaAs, the device also achieves high responsivity, near that of RT-GaAs. This is done by utilizing (a) an AlGaAs heterojunction with RT-GaAs for better collection efficiency of carriers, (b) a thin (85 nm) LT-GaAs layer below this RT-GaAs channel that maintains high speed by capturing slow carriers, and (c) a vertical electric field transverse to cathode-anode direction that guides electrons to the high speed channel and eliminates the low speed holes. These features result in a photodetector device with dark current in tens of picoamps -hence large signal to noise ratio- and high speed of response with full width half max (FWHM) 6.3 psec, while maintaining high responsivity of 0.15 A/W comparable to RT-GaAs and much higher than previous LT-GaAs devices. Device simulation confirms the physical basis for the remarkable performance of this detector. |
| Sponsorship | Photon. Soc. |
| Starting Page | 312 |
| Ending Page | 313 |
| File Size | 437210 |
| Page Count | 2 |
| File Format | |
| ISBN | 9781457707315 |
| e-ISBN | 9781457707339 |
| DOI | 10.1109/IPCon.2012.6358617 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2012-09-23 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Anodes Cathodes Doping Energy measurement Gallium arsenide |
| Content Type | Text |
| Resource Type | Article |
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