NDLI: Spin lifetimes in wurtzite InGaN/ GaN quantum disk-in-nanowire heterostructures from time resolved photoluminescence measurements

Content Provider	IEEE Xplore Digital Library
Author	Banerjee, A. Heo, J. Bhattacharya, P.
Copyright Year	2011
Description	Author affiliation: Dept. of Electr. Eng. & Comput. Sci., Univ. of Michigan, Ann Arbor, MI, USA (Banerjee, A.; Heo, J.; Bhattacharya, P.)
Abstract	Spin-related phenomena in III-V semiconductors have been widely investigated to gain fundamental understanding of spin properties and control of carrier spins in semiconductor heterostructures. A detailed study of the manifestation of spin orbit coupling (SOC) and spin scattering processes in zinc blende structures like GaAs based materials has been already made. The spin lifetime $(τ_{s})$ is expected to be much larger in wurtzite GaN based semiconductors due to their weak SOC. However, there are only few reports on the measurement of spin relaxation in wurtzite GaN and their ternary compounds. Most of $these^{1-3}$ have been made with materials and heterostructures that have a large dislocation density. Interestingly, no output circular polarization is observed due to recombination of spin polarized carriers in InGaN/GaN quantum wells and this is attributed to poor crystalline quality and the presence of $defects^{4}.$ In this context, Ga(In)N nanowires grown by plasma-assisted molecular beam $epitaxy^{5}$ (PA-MBE) provide an ideal platform for study of spin properties in GaN based materials as they are free of extended defects and have a small polarization field. We have performed polarized time-resolved photoluminescence (TRPL) measurements on InGaN quantum disks (QDs) in GaN nanowires for the first time. The measured spin relaxation time is ~100 ps, which is more than an order of magnitude larger than that in GaAs quantum wells.
Sponsorship	Photonics Soc.
Starting Page	531
Ending Page	532
File Size	884786
Page Count	2
File Format	PDF
ISBN	9781424489404
e-ISBN	9781424489398
DOI	10.1109/PHO.2011.6110656
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2011-10-09
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Temperature measurement Nanowires Gallium nitride Semiconductor device measurement Wavelength measurement Transient analysis Measurement by laser beam
Content Type	Text
Resource Type	Article

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