NDLI: 660 nm angled grating DFB lasers

Content Provider	IEEE Xplore Digital Library
Author	Pezeshki, B. Demars, S.D. Osinski, J.S. Zelinski, M. Lang, R.L.
Copyright Year	1996
Description	Author affiliation: SDL Inc., San Jose, CA, USA (Pezeshki, B.)
Abstract	We demonstrate the first visible wavelength angled DFBs with pulsed power levels approaching 0.5 W and CW powers of 200 mW. The device structure is fabricated in the same way as visible wavelength broad area DFB lasers, except that both the gain region and the grating are tilted with respect to the facets. The optical mode is confined laterally by the diffraction grating, and only the component normal to the facet is reflected back into the cavity. Since the grating is operated at an angle, the pitch is considerably increased, and a first order grating is possible even at short wavelengths. The grating reflectivity is highly angle and wavelength selective, and filters out higher order spatial modes with different propagation constants, resulting in single mode operation. The device was fabricated using MOCVD with a two step growth on a GaAs substrate. The first epitaxy included a lower n-type InAlP cladding region, an undoped InAlGaP waveguide containing InGaP quantum wells, and a p-doped InAlGaP grating layer. These devices provide nearly collimated beams in the lateral direction are not limited by catastrophic mirror damage.
Starting Page	81
Ending Page	82
File Size	182939
Page Count	2
File Format	PDF
ISBN	0780338952
ISSN	10928081
DOI	10.1109/LEOS.1997.630527
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1997-11-10
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Optical pulses Laser modes Optical devices Optical filters Optical diffraction Diffraction gratings Reflectivity Propagation constant MOCVD Gallium arsenide
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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