NDLI: Optimization of T/sub 0/ in GaAs/(Al,Ga)As, multiple-quantum-well GRINSCH lasers

Content Provider	IEEE Xplore Digital Library
Author	Dion, M. Li, Z.-M. Ross, D. Chatenoud, F. Williams, R.L.
Copyright Year	1994
Description	Author affiliation: Inst. for Microstructural Sci., Nat. Res. Council of Canada, Ottawa, Ont., Canada (Dion, M.)
Abstract	Although it has been known for many years that GaAs/AlGaAs quantum-well (QW) lasers exhibit low temperature sensitivity, or high characteristic temperatures, T/sub 0/, to our knowledge, optimization of the laser structure so as to maximize T/sub 0/ has never been shown. Previous work in GaAs/AlGaAs has been limited in scope, either only to Al content in the cladding layers and QW thickness, or to a small variety of numbers of quantum wells, n. There has also been work done on the influence of the number of wells in InP-based lasers at 1.3 /spl mu/m and 1.5 /spl mu/m wavelengths. In this paper, we present results of an experimental study on the variation of T/sub 0/ in graded-index, separate-confinement heterostructure GaAs/(Al,Ga)As QW lasers as a function of the Al content in the cladding layers at two different nominal values, and of the number of wells, ranging from n=l to 10.
Starting Page	125
Ending Page	126
File Size	146487
Page Count	2
File Format	PDF
ISBN	0780314700
DOI	10.1109/LEOS.1994.586924
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1994-10-31
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Gallium arsenide Quantum well devices Laser theory Quantum well lasers Waveguide lasers Temperature sensors Solid state circuits Solid lasers Pulse measurements Temperature distribution
Content Type	Text
Resource Type	Article

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