NDLI: Novel "p-encapsulated" InP JFETs with very low leakage for optoelectronic integration with infrared focal plane arrays

Content Provider	IEEE Xplore Digital Library
Author	Dong-Su Kim Studenkov, P. Forrest, S.R. Lange, M.J. Olsen, G.H.
Copyright Year	1996
Description	Author affiliation: ATC/POEM, Princeton Univ., NJ, USA (Dong-Su Kim)
Abstract	Recently, we have demonstrated a monolithic near-infrared FPA in which InGaAs photodiodes, sensitive in the 1.3-1.5 /spl mu/m wavelength spectral region, are integrated with InP junction field-effect transistor (JFET) switches at each pixel. In this array, sources of all the JFETs in each column are connected in parallel and tied to the drain of a column-addressing JFET, while sources of all column-addressing JFETs are connected in parallel at the output. To ensure high sensitivity of such arrays, it is necessary that switching JFETs have very small gate and channel leakage, since leakage currents of an entire column of pixels add up at the output, thereby limiting the maximum array dimensions and sensitivity. To minimize channel leakage, a novel JFET design was employed which is described in this paper.
Starting Page	275
Ending Page	276
File Size	175931
Page Count	2
File Format	PDF
ISBN	0780331605
DOI	10.1109/LEOS.1996.571658
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1996-11-18
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Indium phosphide JFETs Voltage FETs Leakage current PIN photodiodes Temperature measurement Indium gallium arsenide Geometry P-n junctions
Content Type	Text
Resource Type	Article

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