NDLI: High reflectance DBR gratings in LiNbO/sub 3/ channel waveguides for WDM applications

Content Provider	IEEE Xplore Digital Library
Author	Hussell, C.P. Ramaswarny, R.V.
Copyright Year	1995
Description	Author affiliation: Dept. of Electr. Eng., Florida Univ., Gainesville, FL, USA (Hussell, C.P.; Ramaswarny, R.V.)
Abstract	We have proposed and implemented a new concept for fabricating high reflectance DBR grating channel waveguides in materials such as LiNbO/sub 3/ which bypasses many of the problems associated with previous techniques. First, annealed proton exchanged channel waveguides were fabricated on the surface of a LiNbO/sub 3/ substrate using a standard process. Next, we deposited 1800 A of silicon on the surface by e-beam evaporation. A first-order grating (with a period of 359 nm) was formed on the surface of the silicon with commercial photoresist and standard holography using an argon laser at /spl lambda/=457.9 nm. The grating was transferred to the silicon layer by RIE. No additional buffer layer was added. Our preliminary results show higher reflection than any other previously reported. The optimized process is expected to find applications in commercially viable devices. These include key devices of WDM systems such as tunable rare-earth doped DFB lasers, modulators, and tunable filters; as well as SHG devices.
Starting Page	285
Ending Page	286
File Size	205807
Page Count	2
File Format	PDF
ISBN	0780324501
DOI	10.1109/LEOS.1995.484705
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1995-10-30
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Reflectivity Distributed Bragg reflectors Gratings Silicon Tunable circuits and devices Annealing Protons Surface waves Surface emitting lasers Resists
Content Type	Text
Resource Type	Article

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