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| Content Provider | IEEE Xplore Digital Library | 
|---|---|
| Author | Jin, D.Y. Zhang, W.R. Guan, B.L. Chen, L. Hu, N. Xiao, Y. Wang, R.Q. | 
| Copyright Year | 2010 | 
| Description | Author affiliation: College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing, 100124, China (Jin, D.Y.; Zhang, W.R.; Guan, B.L.; Chen, L.; Hu, N.; Xiao, Y.; Wang, R.Q.) | 
| Abstract | The two-dimensional temperature profile of a multi-finger power SiGe HBT is studied with the electrothermal model, which shows that there is an uneven temperature profile over the device finger for HBT with uniform finger length. Because of the positive current-temperature feedback, the uneven temperature profile will leads to an anomalous current distribution, which eventually caused the thermal instability. To improve the uneven temperature profile and enhance the thermal stability, the HBT with non-uniform finger length is designed. Considering that designing multiple finger length values becomes trivial and time-consuming for the HBT with dozens of emitter fingers, a new thermal design methodology namely Grouping and Adjusting (GA) method is proposed to shorten design time. Taking 30-finger HBT for example, a detailed design procedure is present. The calculated results show both significant improvement on the peak temperature and the uniformity of SiGe HBT with non-uniform finger length. | 
| Starting Page | 1 | 
| Ending Page | 4 | 
| File Size | 651832 | 
| Page Count | 4 | 
| File Format | |
| ISBN | 9781424458660 | 
| e-ISBN | 9781424458691 | 
| DOI | 10.1109/IWJT.2010.5474901 | 
| Language | English | 
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) | 
| Publisher Date | 2010-05-10 | 
| Publisher Place | China | 
| Access Restriction | Subscribed | 
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) | 
| Subject Keyword | Design methodology Silicon germanium Germanium silicon alloys Heterojunction bipolar transistors Fingers Electrothermal effects Feedback Temperature distribution Current distribution Thermal stability | 
| Content Type | Text | 
| Resource Type | Article | 
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