NDLI: Impact of laser spike annealing dwell time on wafer stress and photolithography overlay errors

Content Provider	IEEE Xplore Digital Library
Author	Shetty, S. Jain, A. Owen, D.M. Mileham, J. Hebb, J. Yun Wang
Copyright Year	2009
Description	Author affiliation: Ultratech Inc., 3050 Zanker Rd., San Jose, California, 95134, USA (Shetty, S.; Owen, D.M.; Mileham, J.; Hebb, J.; Yun Wang) \|\| External Development and Manufacturing, Texas Instruments Inc., 13121 TI Boulevard, MS 365, Dallas, 75243, USA (Jain, A.)
Abstract	The use of strained SiGe is essential to improvement in device performance. However, the structure is susceptible to strain relaxation and wafer deformation during thermal annealing. The accumulation of stress in the wafer needs to be controlled to minimize photolithographic overlay errors. Laser spike annealing offers negligible pattern effects, closed-loop temperature control, and localized heating, which help control stress intensity and variation. This paper describes the effect of dwell time on deformation and its contribution to overlay error. By the use of a stress measurement technology, the Coherent Gradient Sensing (CGS) interferometer, a detailed characterization of deformation induced during micro-second laser annealing can be correlated to the overlay error.
Starting Page	119
Ending Page	122
File Size	590931
Page Count	4
File Format	PDF
ISBN	9781424433193
DOI	10.1109/IWJT.2009.5166234
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2009-06-11
Publisher Place	Japan
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Annealing Lithography Thermal stresses Stress control Temperature control Silicon germanium Germanium silicon alloys Capacitive sensors Error correction Heating
Content Type	Text
Resource Type	Article

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