NDLI: BEOL Integration of Highly Damage -Resistant Porous Ultra Low-K Material Using Direct CMP and Via-first Process

Content Provider	IEEE Xplore Digital Library
Author	Iijima, T. Lin, Q. Chen, S. Labelle, C. Fuller, N. Ponoth, S. Cohen, S. Lloyd, J. Dunn, D. Muzzy, C. Gill, J. Nitta, S. McGahay, V. Tyberg, C. Spooner, T. Nye, H.
Copyright Year	2006
Description	Author affiliation: Toshiba America Electron. Components Inc. (Iijima, T.)
Abstract	We have demonstrated porous ultra low-K (ULK)/Cu interconnect integration using via first integration scheme and a direct ULK CMP process. The key features of the damage-resistant porous ULK material were novel material chemistry, a higher carbon concentration (15.4 atm%) and an improved pore structure. These improved features of the new ULK material enabled superior process-induced dielectric material damage during patterning etch, resist strip, and ULK direct CMP. Interconnect structures fabricated using the conventional ULK material showed high short leakage currents and open failures due to moisture uptake. The integrated structures of the new, robust porous ULK material exhibited good electrical properties. The target capacitance values have been achieved for future porous ULK/Cu interconnects
Sponsorship	IEEE Electron Devices Soc
Starting Page	21
Ending Page	23
File Size	676923
Page Count	3
File Format	PDF
ISBN	1424401046
DOI	10.1109/IITC.2006.1648634
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2006-06-05
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Dielectric materials Organic materials Chemistry Etching Resists Strips Leakage current Moisture Robustness Capacitance
Content Type	Text
Resource Type	Article

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