NDLI: Deposition of WN/sub x/C/sub y/ thin films by ALCVD/spl trade/ method for diffusion barriers in metallization

Content Provider	IEEE Xplore Digital Library
Author	Wei-Min Li Kai Elers Juhana Kostamo Kaipio, S. Huotari, H. Soininen, M. Soininen, P.J. Tuominen, M. Haukka, S. Smith, S. Besling, W.
Copyright Year	2002
Description	Author affiliation: ASM Microchemistry Ltd., Espoo, Finland (Wei-Min Li; Kai Elers; Juhana Kostamo; Kaipio, S.; Huotari, H.; Soininen, M.; Soininen, P.J.; Tuominen, M.; Haukka, S.)
Abstract	A new process of depositing ternary tungsten nitride carbide WN/sub x/C/sub y/ films as a diffusion barrier material for copper metallization has been developed with the atomic layer chemical vapor deposition (ALCVD/spl trade/) technology. The growth temperature was varied from 300 to 350/spl deg/C, and the resistivity was in a range of 300-400 /spl mu//spl Omega/cm for a /spl sim/25 nm film. The film composition was influenced by deposition conditions with a W, N and C content of approximately 55, 15, and 30 at.%, respectively. Impurities such as F, O, and B in the bulk of the film were low, less than 1 at.% or under the detection limit of analysis tools used. The deposited films showed excellent compatibility with different substrates including Cu, SiO/sub 2/, SiC, Si/sub x/N/sub y/, SiLK and Aurora. Preliminary electrical tests of WN/sub x/C/sub y/ on the dual damascene wafers showed promising results.
Starting Page	191
Ending Page	193
File Size	178899
Page Count	3
File Format	PDF
ISBN	0780372166
DOI	10.1109/IITC.2002.1014930
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2002-06-05
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Copper Tungsten Inorganic materials Metallization Atomic layer deposition Chemical vapor deposition Chemical technology Temperature distribution Conductivity Impurities
Content Type	Text
Resource Type	Article

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