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Content Provider | IEEE Xplore Digital Library |
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Author | Aubel, O. Yao, W. Meyer, M.A. Engelmann, H.J. Poppe, J. Feustel, F. Witt, C. |
Copyright Year | 2009 |
Description | Author affiliation: GLOBALFOUNDRIES, 1050 E. Arques Ave, Sunnyvale, CA 94085, USA (Yao, W.) || GLOBALFOUNDRIES Dresden Module One LLC & Co. KG, Wilschdorfer Landstr. 101, 01109, Germany (Aubel, O.; Meyer, M.A.; Engelmann, H.J.; Poppe, J.; Feustel, F.) || GLOBALFOUNDRIES, T.J. Watson Research Center, Yorktown Heights, NY, USA (Witt, C.) |
Abstract | In this paper we showed results on high temperature storage tests performed on 90nm, 65nm and 45nm node material with different back end of line stacks. We have seen a strong impact of BEOL stack up on resistance traces of tests at temperature of over 250°C for 1000h. We found that the detected resistance increases are not related to stress migration phenomena but to changes in barrier integrity. The results suggest that the barrier is oxidizing due to oxygen supplied by the SiCOH ILD. First look into future technologies by adopted barrier processes simulating corresponding barrier thicknesses we see an acceleration of this results. Porous SiCOH which is used as baseline material for 45nm an beyond is even pronouncing this effect. This is definitely showing that this effect might become severe in future technologies. |
Starting Page | 5 |
Ending Page | 10 |
File Size | 1185089 |
Page Count | 6 |
File Format | |
ISBN | 9781424439218 |
ISSN | 19308841 |
DOI | 10.1109/IRWS.2009.5383044 |
Language | English |
Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Publisher Date | 2009-10-18 |
Publisher Place | USA |
Access Restriction | Subscribed |
Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Subject Keyword | Failure analysis Thermal stresses Packaging Conductivity Wafer scale integration Electrical resistance measurement System testing Temperature distribution Ovens Electromigration |
Content Type | Text |
Resource Type | Article |
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