NDLI: Reliability of dielectric barriers in copper damascene applications

Content Provider	IEEE Xplore Digital Library
Author	Lee, A.S. Lakshmanan, A. Rajagopalan, N. Zhenjiang Cui Le, M. Li Qun Xia Bok Heon Kim Hichem M'Saad
Copyright Year	2003
Description	Author affiliation: Dielectric Syst. & Modules Product Bus. Group, Appl. Mater. Inc., Santa Clara, CA, USA (Lee, A.S.; Lakshmanan, A.; Rajagopalan, N.; Zhenjiang Cui; Le, M.; Li Qun Xia; Bok Heon Kim; Hichem M'Saad)
Abstract	The film properties of two PECVD deposited dielectric copper barrier films have been optimized to improve BEOL device reliability in terms of electromigration. Two critical aspects that affect electromigration are the dielectric barrier film hermeticity and adhesion to copper. We use a method to quantify the barrier film hermeticity of the BLO/spl kappa/ I low-/spl kappa/ dielectric film to be similar to that of silicon nitride. In addition, the interfaces between damascene nitride with copper, as well as BLO/spl kappa/ I with copper have been engineered to improve the interfacial adhesion energy to >10 J/m/sup 2/ for both damascene nitride and BLO/spl kappa/ I.
Sponsorship	IEEE Electron Devices Soc. IEEE Reliability Soc
Starting Page	137
Ending Page	138
File Size	176902
Page Count	2
File Format	PDF
ISBN	0780381572
DOI	10.1109/IRWS.2003.1283321
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2003-10-20
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Copper Adhesives Tensile stress Electromigration Compressive stress Dielectric devices Dielectric films Silicon Dielectric thin films Moisture
Content Type	Text
Resource Type	Article

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