NDLI: Conducting atomic force microscopy studies for reliability evaluation of ultrathin SiO/sub 2/ films

Content Provider	IEEE Xplore Digital Library
Author	Benstetter, G. Frammelsberger, W. Schweinboeck, T. Stamp, R.J. Kiely, J.
Copyright Year	2002
Description	Author affiliation: Univ. of Appl. Sci. Deggendorf, Germany (Benstetter, G.)
Abstract	Topography and tunnelling current mapping of 13, 24 and 53 /spl Aring/ thick SiO/sub 2/ oxides on silicon substrates have been performed by combined AFM (atomic force microscopy) techniques. The topography measurements revealed an increased density of pits on the SiO/sub 2/ surface of the 13 and 24 /spl Aring/ oxide. This gave rise to concerns over technology reliability, and suggested further analysis. Various AFM techniques including Conducting AFM (C-AFM) and Intermittent Contact AFM (IC-AFM) have been used singly and in combination. Commercially available C-AFM tips have been observed to limit the available spatial resolution. Therefore, additional high resolution IC-AFM measurements with sharp silicon probe tips have been made by the incorporation of nanometric orientation marks grown purposely on the surface by anodic oxidation. Good correlation between the topography image of the IC-AFM and the tunneling current mapping of C-AFM in respect to the location of surface features has been observed.
Sponsorship	IEEE Electron Devices Soc. IEEE Reliability Soc
Starting Page	21
Ending Page	28
File Size	682723
Page Count	8
File Format	PDF
ISBN	0780375580
DOI	10.1109/IRWS.2002.1194226
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2002-10-21
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Atomic force microscopy Conductive films Surface topography Tunneling Atomic measurements Silicon Probes Semiconductor device reliability Testing Electric breakdown
Content Type	Text
Resource Type	Article

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