NDLI: Terahertz spectroscopy of modulation doped core-shell GaAs/AlGaAs nanowires

Content Provider	IEEE Xplore Digital Library
Author	Boland, J.L. Conesa-Boj, S. Tutuncouglu, G. Matteini, F. Ruffer, D. Casadei, A. Gaveen, F. Amaduzzi, F. Parkinson, P. Davies, C. Joyce, H.J. Herz, L.M. Morral, A.F.I. Johnston, M.B.
Copyright Year	2015
Description	Author affiliation: Centre for Adv. Photonics & Electron., Univ. of Cambridge, Cambridge, UK (Joyce, H.J.) \|\| Ecole Polytech. Fed. de Lausanne, Lausanne, Switzerland (Conesa-Boj, S.; Tutuncouglu, G.; Matteini, F.; Ruffer, D.; Casadei, A.; Gaveen, F.; Amaduzzi, F.; Morral, A.F.I.) \|\| Dept. of Phys., Univ. of Oxford, Oxford, UK (Boland, J.L.; Parkinson, P.; Davies, C.; Herz, L.M.; Johnston, M.B.)
Abstract	In order to realize many devices based on semiconductor nanowires, reliable doping is essential. For such devices, it is important that the electron mobility is not compromised by doping incorporation. Here, we show that core-shell GaAs/AlGaAs nanowires can be modulation n-type doped with negligible loss of electron mobility. Optical pump terahertz probe spectroscopy is used as a novel, reliable, noncontact method of determining the doping density, carrier mobility and charge carrier lifetimes for these n-type nanowires and an undoped reference. A carrier concentration of 1.10 ± 0.06 × $10^{16}$ $cm^{-3}$ was extracted proving the effectiveness of modulation doping in GaAs nanowires. The room-temperature electron mobility was found to be high at 2200 ± 300 $cm^{2}V^{-1}s^{-1}$ with no degradation in comparison to undoped reference nanowires. In addition, modulation doping was found to enhance both the photoconductivity and photoluminescence lifetimes to 3.9 ± 0.3ns and 2.4 ± 0.1ns respectively, revealing that modulation doping can passivate interfacial trap $states.^{1}$
Starting Page	1
Ending Page	1
File Size	233800
Page Count	1
File Format	PDF
ISSN	21622035
e-ISBN	9781479982721
DOI	10.1109/IRMMW-THz.2015.7327825
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2015-08-23
Publisher Place	China
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Nanowires Epitaxial layers Electron mobility Gallium arsenide Doping Photoconductivity Charge carrier lifetime
Content Type	Text
Resource Type	Article

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