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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Zhang Xianbin Shi Wei Ma Chengju Su Xinwu Li Hua |
| Copyright Year | 2006 |
| Description | Author affiliation: Xi'an Univ. of Technol., Xi'an (Zhang Xianbin; Shi Wei; Ma Chengju; Su Xinwu) |
| Abstract | Pulse laser of 1064 nm damage studies are performed in two kinds of material. One is the $MgO:LiNbO_{3}$ for using in THz parameter generator system, and another is the Si-GaAs material for using in THz photoconductive antenna. All the experiments were performed in the bulk of material, which irradiated by Nd:YAG Q-switch laser beam with nanosecond pulse. In the case of the $LiNbO_{3},$ the damage is associated with both the self-focusing inside the material, and the thermal damage on the face. As for the GaAs, the material damage can be divided into two types of the un-reparable and reparable. |
| Starting Page | 469 |
| Ending Page | 469 |
| File Size | 1192808 |
| Page Count | 1 |
| File Format | |
| ISBN | 1424403995 |
| DOI | 10.1109/ICIMW.2006.368677 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2006-09-18 |
| Publisher Place | China |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Optical materials Photoconducting materials Gallium arsenide Crystalline materials Nonlinear optics Surface emitting lasers Optical surface waves Laser theory Optical pulses Optical pumping |
| Content Type | Text |
| Resource Type | Article |
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