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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Fraga, M.A. Furlan, H. Wakavaiachi, S.M. Massi, M. |
| Copyright Year | 2010 |
| Description | Author affiliation: Departamento de Mecânica de Precisão, Faculdade de Tecnologia de São Paulo, São Paulo - SP, Brazil (Furlan, H.) || Laboratório de Plasmas e Processos, Instituto Tecnológico de Aeronáutica, S J dos Campos - SP, Brazil (Fraga, M.A.; Wakavaiachi, S.M.; Massi, M.) |
| Abstract | In this work, we studied the fabrication and characterization of strain sensors based on semiconductor materials for high temperature applications: non-stoichometric amorphous silicon carbide (a-SixCy) thin film and SOI (Silicon-On-Insulator) substrates. a-SixCy were deposited onto thermally oxidized (100) Si wafers by plasma enhanced chemical vapor deposition (PECVD) technique using silane (SiH4) and methane (CH4) as precursor gases. The SOI wafer used had a sandwich structure of a 0.2 µm thick top p-type Si layer, 0.5 µm thick buried oxide (BOX) layer and 250µm Si substrate. The piezoresistive strain sensitivity element in the sensors is a a-SixCy thin-film resistor or a Si p-type resistor formed on SOI substrate. Gauge factor (GF) measurements were done using the beam-bending method. One resistor of each type was bonded near the clamped edge of a stainless steel cantilever beam and on the free edge were applied different forces. The electrical resistance of each resistor was measured without applied load on the beam and during subsequent tensile load. The temperature coefficient of resistance (TCR) also was investigated from room temperature up to 250°C. The results indicate that the a-SixCy thin-film resistor has a GF of 48 and a TCR of 35 ppm/°C whereas p-type Si on SOI substrate has gauge factor of 22 and TCR of 140 ppm/°C. |
| Starting Page | 513 |
| Ending Page | 516 |
| File Size | 873559 |
| Page Count | 4 |
| File Format | |
| ISBN | 9781424456956 |
| e-ISBN | 9781424456970 |
| e-ISBN | 9781424456963 |
| DOI | 10.1109/ICIT.2010.5472747 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2010-03-14 |
| Publisher Place | Chile |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Temperature sensors Fabrication Piezoresistance Capacitive sensors Sensor phenomena and characterization Plasma temperature Resistors Substrates Thin film sensors Semiconductor thin films |
| Content Type | Text |
| Resource Type | Article |
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