NDLI: Review on diamond based piezoresistive sensors

Content Provider	IEEE Xplore Digital Library
Author	Werner, M. Gluche, P. Adamschik, M. Kohn, E. Fecht, H.-J.
Copyright Year	1998
Description	Author affiliation: Dept. of Syst. Integration, VDI-VDE-Technol. Inf. GmbH, Teltow, Germany (Werner, M.)
Abstract	Nearterm industrial applications require pressure sensors and acceleration sensors which are able to operate at elevated temperatures and in harsh environments where conventional silicon devices do not work. Many properties of diamond (e.g. its physical hardness, high Young's modulus, high tensile yield strength, chemical inertness, low coefficient of friction and high thermal conductivity) make diamond an excellent material for micromechanical device applications which include piezoresistive (e.g. pressure and acceleration) sensors. The measurement of the gauge factor of B-doped, polycrystalline CVD diamond thin films leads to the result that the longitudinal piezoresistive effect is larger than the transverse piezoresistive effect for all B-doping concentrations. Furthermore, the transverse piezoresistive effect shows a pronounced nonlinearity. Therefore, a "longitudinal" pressure sensor lay out should be preferred. In general, the longitudinal gauge factor increases with decreasing doping concentration and can be larger than 100, which is comparable to single-crystalline silicon, and larger than the reported gauge factors of SiC. First prototype pressure sensors with B-doped polycrystalline diamond piezoresistors connected to form a Wheatstone bridge on top of a silicon square membrane (1300 /spl mu/m/spl times/1300 /spl mu/m/spl times/30 /spl mu/m) show an excellent linearity. The sensitivity of 1.64/spl times/10/sup -5/ mV/(V Pa)/sup -1/ can be improved using a lower doping concentration of the piezoresistors.
Starting Page	147
Ending Page	152
File Size	740600
Page Count	6
File Format	PDF
ISBN	0780347560
DOI	10.1109/ISIE.1998.707766
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1998-07-07
Publisher Place	South Africa
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Piezoresistance Chemical sensors Temperature sensors Acceleration Thermal conductivity Doping Piezoresistive devices Silicon devices Chemical vapor deposition Friction
Content Type	Text
Resource Type	Article

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