NDLI: Electrical Simulation Model of the 2T-FLOTOX Core-Cell for Defect Injection and Faulty Behavior Prediction in eFlash Memories

Content Provider	IEEE Xplore Digital Library
Author	Ginez, O. Daga, J.-M. Girard, P. Landrault, C. Pravossoudovitch, S. Virazel, A.
Copyright Year	2007
Description	Author affiliation: Lab. d'Inf., Univ. de Montpellier 11/ CNRS, Montpellier (Ginez, O.)
Abstract	The embedded flash technology can be subject to complex defects creating functional faults. In this paper, we describe the different steps in the electrical modeling of 2T-FLOTOX core-cells for a good understanding of failure mechanisms. First, we present a first order electrical model of 2T-FLOTOX core-cells which is characterized and compared with silicon data measurements based on the ATMEL 0.15 mum eFlash technology. Next, we propose a study of resistive defect injections in eFlash memories to show the relevance of the proposed simulation model. At the end of the paper, a table summarizes the functional fault models for different resistive defect configurations and experimental set-ups. According to these first results and with additional analysis of actual defects presented in [1] we are then able to enhance existing test solutions for eFlash testing.
Starting Page	77
Ending Page	84
File Size	234002
Page Count	8
File Format	PDF
ISBN	0769528279
DOI	10.1109/ETS.2007.20
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2007-05-20
Publisher Place	Germany
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Predictive models Testing Nonvolatile memory Silicon Logic Uniform resource locators System-on-a-chip Performance analysis Robots Libraries
Content Type	Text
Resource Type	Article

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