NDLI: A study on the V/sub th/ shift of $HfAlO_{x}$ MISFETs with $n^{+}/p^{+}$ poly-Si and TiN gate electrodes fabricated by replacement gate process

Content Provider	IEEE Xplore Digital Library
Author	Akasaka, Y. Miyagawa, K. Syoji, H. Ogawa, O. Kawahara, T. Horiuchi, A. Mitsuhashi, R. Maeda, T. Muto, A. Kasai, N. Yasuhira, M. Arikado, T.
Copyright Year	2003
Description	Author affiliation: Semicond. Leading Edge Technol. Inc., Tsukuba, Japan (Akasaka, Y.; Miyagawa, K.; Syoji, H.; Ogawa, O.; Kawahara, T.; Horiuchi, A.; Mitsuhashi, R.; Maeda, T.; Muto, A.; Kasai, N.; Yasuhira, M.; Arikado, T.)
Abstract	The V/sub th/ shift of a poly-Si/high-k MISFET has been reported. The observed V/sub t/h of p/sup +/ poly-Si/HfAlO/sub x/ or HfSiO/sub x/ is much higher than that of the p/sup +/ poly/SiON MISFET. The controlled V/sub th/ of the PMISFET is strongly required for the application of high-k insulators. In this study, we fabricated HfAlO/sub x/ MISFETs with n/sup +//p/sup +/ poly-Si and TiN gate electrodes by using the same "replacement gate" process. We found that the difference of V/sub fb/ between n/sup +/ poly-Si-/HfAlOx and p/sup +/ poly-Si/HfAlO/sub x/ systems is independent of channel types and much smaller than 1 V i.e. the theoretical difference between the work function of n/sup +/ and p/sup +/ Si. On the other hand, the TiN/HfAlO/sub x/ system shows the appropriate V/sub fb/ expected from work function.
Sponsorship	JSAP: Japan Soc. of Appl. Phys. JSAP Thin Film and Surface Phys. Div. JSAP Silicon Technol. Div
Starting Page	94
Ending Page	95
File Size	217914
Page Count	2
File Format	PDF
ISBN	4891140372
DOI	10.1109/IWGI.2003.159192
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2003-11-06
Publisher Place	Japan
Access Restriction	Subscribed
Rights Holder	Japan Society of Applied Physics
Subject Keyword	MISFETs Tin Electrodes Channel bank filters Leakage current High K dielectric materials High-K gate dielectrics Insulation Boron Capacitors
Content Type	Text
Resource Type	Article

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