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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Mizan, M. |
| Copyright Year | 1992 |
| Description | Author affiliation: US Army LABCOM. Fort, Monmouth, NJ, USA (Mizan, M.) |
| Abstract | A 9 GHz dielectric resonator oscillator (DRO) generating a continuous wave (CW) power output of 2.5 watts at room temperature has been designed and fabricated by incorporating a high power GaAs FET amplifier and a dielectric resonator (DR) in a feedback loop oscillator configuration. The DC to RF conversion efficiency of this DRO is about 11%. The oscillator exhibits a frequency stability of less than 130 ppm over the temperature range of -50 degrees C to +50 degrees C. Measured single-sideband phase noise levels are -105 dBc/Hz and -135 dBc/Hz at 10 kHz and 100 kHz carrier offset frequencies, respectively. The output power varies from +35 dBm (3.2 watts) at -50 degrees C to +33 dBm (2 watt) at +50 degrees C. The DRO output power is fed into a single-stage GaAs FET amplifier, resulting in a total power output of 6.5 watts at X-band. The overall efficiency of the 6.5 watt DRO unit is about 12%. The pulse power capability of the DRO unit is investigated. The unit can deliver 10 watts of pulse power for a pulse duration of one microsecond or less.< |
| Starting Page | 409 |
| Ending Page | 414 |
| File Size | 411038 |
| Page Count | 6 |
| File Format | |
| ISBN | 0780304764 |
| DOI | 10.1109/FREQ.1992.269987 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 1992-05-27 |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Pulse amplifiers Oscillators Power generation Power amplifiers Dielectrics Gallium arsenide FETs Frequency Temperature High power amplifiers |
| Content Type | Text |
| Resource Type | Article |
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