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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Matsushima, T. Yamauchi, N. Shirai, T. Yoshihara, T. Hayasaki, Y. Ueda, T. Kanno, I. Wasa, K. Kotera, H. |
| Copyright Year | 2010 |
| Description | Author affiliation: Department of Micro-engineering, Kyoto University, Yoshida Honmachi, Sakyo-ku, 606-8501, JAPAN (Kanno, I.; Wasa, K.; Kotera, H.) || Advanced Technologies Development Laboratory, Panasonic Electric Works, Co., Ltd., 11048, Kadoma, Osaka 571-8686, JAPAN (Matsushima, T.; Yamauchi, N.; Shirai, T.; Yoshihara, T.; Hayasaki, Y.; Ueda, T.) |
| Abstract | The 4 GHz film resontors have been fabricated by sputtered Pb(Mn,Nb)O3-Pb(Zr,Ti)O3 (PMnN-PZT) thin films. The PMnN-PZT thin films were deposited on (100)MgO substrates. The thin films showed tetragonal crystal structure and highly (001) orientation. The film bulk acoustic resonators (FBAR) composed by PMnN-PZT thin films were fabricated by MEMS technology. RF properties of the resonator were evaluated by VNA (Vector Network Analyzer). The electro-mechanical coupling constant kt and Q-value for PMnN-PZT thin films were 0.7 and 157, at 4.17GHz, respectively. These values obtained by sputtered thin films are highest comparing with those of previously reported PZT-BAW resonators. |
| Starting Page | 248 |
| Ending Page | 251 |
| File Size | 425790 |
| Page Count | 4 |
| File Format | |
| ISBN | 9781424463992 |
| ISSN | 10756787 |
| e-ISBN | 9781424464012 |
| DOI | 10.1109/FREQ.2010.5556334 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2010-06-01 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Radio frequency Sputtering Couplings Resonator filters Films Film bulk acoustic resonators Crystals |
| Content Type | Text |
| Resource Type | Article |
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