NDLI: Tailing the optical property of GaAsSb by passivating with S2Cl2 solution

Content Provider	IEEE Xplore Digital Library
Author	Yanli Wu Dan Fang Li Xu Xiaohui Ma Jilong Tang Xian Gao Ruxue Li Shouzhu Niu Xiaohua Wang
Copyright Year	2015
Description	Author affiliation: State Key Lab. of High Power Semicond. Laser, Changchun Univ. of Sci. & Technol., Changchun, China (Yanli Wu; Dan Fang; Li Xu; Xiaohui Ma; Jilong Tang; Xian Gao; Ruxue Li; Shouzhu Niu; Xiaohua Wang)
Abstract	We characterized the surface property of GaAsSb that grown by MBE (molecular beam epitaxy) via XRD (X-ray diffraction) and AFM (Atomic Force Microscopy). Based on these measurements, we first did research on the surface of GaAsSb after sulfur passivation and characterized the effect with PL (Photoluminescence) and AFM techniques. The treatment on GaAsSb with $S_{2}Cl_{2}$ solution was carried out with different time, and when the time is 10s, we obtained the best effect of passivation: the enhancement of emission is the highest, up to three orders of magnitude and the surface is covered with sulfides uniformly. Overall, the surface luminescence properties have been greatly improved after sulfur passivation, which is of great value for the applications of GaAsSb devices.
Starting Page	411
Ending Page	414
File Size	360072
Page Count	4
File Format	PDF
e-ISBN	9781467374620
DOI	10.1109/ICoOM.2015.7398855
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2015-07-16
Publisher Place	China
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	GaAsSb Surface morphology Luminescence AFM Surface roughness Rough surfaces XRD Sulfur PL Passivation
Content Type	Text
Resource Type	Article

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