NDLI: Temperature influence on Hall effect sensors characteristics

Content Provider	IEEE Xplore Digital Library
Author	Cholakova, I.N. Takov, T.B. Tsankov, R.T. Simonne, N.
Copyright Year	2012
Description	Author affiliation: Melexis, Bulgaria (Tsankov, R.T.; Simonne, N.) \|\| Technical University of Sofia, Faculty of Electronic Engineering and Technology, Bulgaria (Cholakova, I.N.; Takov, T.B.)
Abstract	Horizontal Hall microsensors, comprising a silicon substrate and four contacts, providing two supply inputs and two differential outputs, are designed and characterized. This paper presents the temperature influence on the residual offset and also on the voltage related sensitivities. The measured voltage related sensitivity is 152 mV/VT. The sensors are tested at 125°C, 85°C, 50°C, 25°C, 0°C, −20°C and −40°C. An offset compensation method is used in order to achieve residual offset in the micro scale (the highest achieved value offset is 6.97 μV).
Starting Page	967
Ending Page	970
File Size	207076
Page Count	4
File Format	PDF
ISBN	9781467329835
e-ISBN	9781467329842
DOI	10.1109/TELFOR.2012.6419370
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2012-11-20
Publisher Place	Serbia
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Temperature sensors Temperature measurement Semiconductor device measurement Temperature dependence Sensitivity Voltage measurement Magnetic sensors Hall microsensors Sensitivities 0.18μm CMOS technology Offset
Content Type	Text
Resource Type	Article

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