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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Zhenxin Geng Xin Lin Binge Si |
| Copyright Year | 2013 |
| Description | Author affiliation: Sch. of Electr. Eng., Shenyang Univ. of Technol., Shenyang, China (Zhenxin Geng; Xin Lin) || TBEA Shenyang Transformer Co., Ltd., Shenyang, China (Binge Si) |
| Abstract | Fourier transform are used on the very fast transient overvoltage (VFTO) discretion, different spectral components of transient voltage waveform are achieved. The mathematical model of the transient electric field is deduced considering dielectric polarization loss and displacement current. FEM is adopted to calculate the transient electric field of gas insulated switchgear disk insulator under the condition of VFTO, potential distribution curves at key point time are shown, which are compared with the one in the quiescent state. The tangential electric field strength and normal electric field strength along with radial direction on the insulator surface are illustrated. Some effects of typical positions electric field strength along with time are shown in this paper. The references for GIS insulation design are provided. |
| Starting Page | 1 |
| Ending Page | 4 |
| File Size | 1109273 |
| Page Count | 4 |
| File Format | |
| ISBN | 9781479938179 |
| DOI | 10.1109/ICEPE-ST.2013.6804297 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2013-10-20 |
| Publisher Place | Japan |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Very fast transient overvoltage Lighting Disk insulator Flashover Gas insulated switchgear Insulators Silicon Transient analysis Electric fields Transient electric field |
| Content Type | Text |
| Resource Type | Article |
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