NDLI: First principle leakage current reduction technique for CMOS devices

Content Provider	IEEE Xplore Digital Library
Author	Tsague, H.D. Twala, B.
Copyright Year	2015
Description	Author affiliation: Dept. of Electr. & Electron. Eng. Sci., Fac. of Eng., Univ. of Johannesburg, Johannesburg, South Africa (Twala, B.) \|\| Modelling & Digital Sci., Council for Sci. & Ind. Res., Pretoria, South Africa (Tsague, H.D.)
Abstract	This paper presents a comprehensive study of leakage reduction techniques applicable to CMOS based devices. In the process, mathematical equations that model the power-performance trade-offs in CMOS logic circuits are presented. From those equations, suitable techniques for leakage reduction as pertaining to CMOS devices are deduced. Throughout this research it became evident that designing CMOS devices with high-κ dielectrics is a viable method for reducing leakages in cryptographic devices. To support our claim, a 22nm NMOS device was built and simulated in Athena software from Silvaco. The electrical characteristics of the fabricated device were extracted using the Atlas component of the simulator. From this research, it became evident that high-κ dielectric metal gate are capable of providing a reliable resistance to DPA and other form of attacks on cryptographic platforms such as smart card.The fabricated device showed a marked improvement on the $I_{on}/I_{off}$ ratio, where the higher ratio means that the device is suitable for low power applications. Physical models used for simulation included $SI_{3}N_{4}$ and $HfO_{2}$ as gate dielectric with TiSix as metal gate. From the simulation result, it was shown that $HfO_{2}$ was the best dielectric material when TiSix is used as the metal gate.
Starting Page	1
Ending Page	6
File Size	287739
Page Count	6
File Format	PDF
e-ISBN	9781467393546
DOI	10.1109/CCCS.2015.7374165
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2015-12-04
Publisher Place	Mauritius
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Voltage fluctuations Power quality High-K dielectric gate Variable speed drives Smart card Generators Distributed power generation Circuit faults Integrated circuit modeling Differential power analysis
Content Type	Text
Resource Type	Article

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