NDLI: Determination of a specific value for the dielectric breakdown of thin insulating layers

Content Provider	IEEE Xplore Digital Library
Author	Lacoste, R. Muhammad, A. Segui, Y. Voumbo-M., L.
Copyright Year	1983
Description	Author affiliation: Laboratoire de Génie Electrique associé au C.N.R.S., Université Paul Sabatier, Toulouse, France (Lacoste, R.; Muhammad, A.; Segui, Y.; Voumbo-M., L.)
Abstract	The extrapolation to infinity of the mean time interval between two successive breakdowns as a function of the electric field applied to a thin dielectric layer leads to the concept of a specific breakdown field. Some exemples relating to very different materials indicate that such a criterion is clearer than the classical dielectric breakdown resulting from an average between several first failures occuring when a ramp voltage is applied. Therefore, the specific breakdown field can be used as well in applications for comparing the properties of different insulating materials, in microelectronics for example,as, from a fundamental point of view for studying breakdown processes in connection with the geometrical and structural parameters of the specimen and the existence of defects clusters, their growth and their possible healing before a failure.
Starting Page	317
Ending Page	321
File Size	1067528
Page Count	5
File Format	PDF
DOI	10.1109/ICSD.1983.7411528
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1983-07-04
Publisher Place	France
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Electrodes Insulators Silicon Delays Table lookup Artificial intelligence
Content Type	Text
Resource Type	Article

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