NDLI: Slurry selectivity to local thickness variations control in advanced Cu CMP process

Content Provider	IEEE Xplore Digital Library
Author	Kuang-Wei Chen Tung-He Chou Syue-Ren Wu Chun-Fu Chen Yung-Tai Hung Tuung Luoh Ling-Wuu Yang Tahone Yang Kuang-Chao Chen
Copyright Year	2015
Description	Author affiliation: Adv. Module Process, Dev. Div., Macronix Int. Co., Ltd., Hsinchu, Taiwan (Kuang-Wei Chen; Tung-He Chou; Syue-Ren Wu; Chun-Fu Chen; Yung-Tai Hung; Tuung Luoh; Ling-Wuu Yang; Tahone Yang; Kuang-Chao Chen)
Abstract	Color abnormal phenomenon in post Cu chemical mechanical planarization (CMP) is found in 3X nm flash memory. TEM cross-section shows that there is no Cu residue but has localized thickness variation. This color abnormal phenomenon cannot be eliminated with subsequently Cu and barrier polishing. According to experimental results, the non-uniform inhibitor distribution of Cu slurry issue will enhance the localized Cu dishing profile and lead to thickness variations after barrier polishing. This phenomenon is found especially at high selectivity Cu slurry in advanced Cu CMP process. Color abnormal issue is resolved by implementing the slurry with lower corrosion inhibitor concentration. Although it may have slightly dishing issue after Cu polishing, it can be optimized by subsequent barrier polishing process.
Starting Page	1
Ending Page	3
File Size	1132883
Page Count	3
File Format	PDF
ISBN	9781479972418
ISSN	21582297
DOI	10.1109/CSTIC.2015.7153425
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2015-03-15
Publisher Place	China
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Process control Slurries
Content Type	Text
Resource Type	Article

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

Barrier CMP slurry for low topography and wide process window

Cu/Low-k Thickness Measurement for Advanced Cu CMP Process Development and Control

Technology challenges for advanced Cu CMP using a new slurry free process

Slurry Flow in CMP Considering the Pad Roughness and Porosity

Study of central supply methodology for silica-based CMP slurry

Investigation on cu height process control method in BEOL Cu CMP

Development of SiN CMP Slurry with Selectivity Control

Improving Cu line Rs control using feed-forward information for CMP endpointing

Achievement of non-selectivity barrier slurry by adding H3PO4 and its application in patterned wafers CMP

Slurry selectivity to local thickness variations control in advanced Cu CMP process

Similar Documents

Barrier CMP slurry for low topography and wide process window

Cu/Low-k Thickness Measurement for Advanced Cu CMP Process Development and Control

Technology challenges for advanced Cu CMP using a new slurry free process

Slurry Flow in CMP Considering the Pad Roughness and Porosity

Study of central supply methodology for silica-based CMP slurry

Investigation on cu height process control method in BEOL Cu CMP

Development of SiN CMP Slurry with Selectivity Control

Improving Cu line Rs control using feed-forward information for CMP endpointing

Achievement of non-selectivity barrier slurry by adding H3PO4 and its application in patterned wafers CMP

Slurry selectivity to local thickness variations control in advanced Cu CMP process