NDLI: The diffusion of Ag in GaN-based surface plasmon light-emitting diodes under different temperature annealing

Content Provider	IEEE Xplore Digital Library
Author	Lei Liu Li-Xia Zhao Zhi-Guo Yu Jun-Xi Wang Yi-Ping Zeng Jin-Min Li
Copyright Year	2014
Description	Author affiliation: Semicond. Lighting Technol. R & D center, Inst. of Semicond., Beijing, China (Lei Liu; Li-Xia Zhao; Zhi-Guo Yu; Jun-Xi Wang; Yi-Ping Zeng; Jin-Min Li)
Abstract	In order to achieve effective coupling between the surface plasmon and the quantum wells (QWs) for surface plasmon LEDs, metal-embedded or thin p-GaN layer approach have been normally been used, but by taking either of these methods, the enhancement of the IQE of the fabricated SP-LEDs is not remarkable, in some cases, the internal quantum efficiency even decreases. Here, this study is to clarify the origin and understand what kind of influence of temperature treatment to the LED structure. GaN based LEDs with Ag from the same epitaxial wafer were annealed under different temperatures to imitate the high temperature treatment during the SP-LED fabrication. The results show that the diffusion of Ag into the quantum wells could be one of the reasons and in order to realize SP-LEDs with high IQE, high temperature treatments need to be avoided to prevent the diffusion of metal.
Starting Page	125
Ending Page	128
File Size	7854605
Page Count	4
File Format	PDF
ISBN	9781479966967
e-ISBN	9781479966974
DOI	10.1109/SSLCHINA.2014.7127237
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2014-11-06
Publisher Place	China
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Temperature measurement Annealing Metals Light emitting diodes Plasmons Gallium nitride Quantum well devices
Content Type	Text
Resource Type	Article

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