NDLI: Operational process for manufacturing a MEMS micro-cantilever system

Content Provider	IEEE Xplore Digital Library
Author	Kafumbe, S. Danthakani, R. Abd-Elrady, E. Alqudah, M. Harris, A. Burdess, J.
Copyright Year	2015
Description	Author affiliation: Sch. of Electr., Newcastle Univ., Newcastle upon Tyne, UK (Harris, A.) \|\| Sch. of Mech. Syst. Eng., Newcastle Univ., Newcastle upon Tyne, UK (Burdess, J.) \|\| Dept. of Electron. Eng. Technol., Higher Colleges of Technol., Abu Dhabi, United Arab Emirates (Kafumbe, S.; Danthakani, R.; Abd-Elrady, E.; Alqudah, M.)
Abstract	The processing techniques and materials utilized in the fabrication of a two-terminal electrostatically actuated micro-electro-mechanical (MEMS) cantilever-arrayed device used for radio frequency tuning applications are presented in this work. The process is based on silicon surface micromachining with spin-coated photoresist as the sacrificial layer placed underneath the electroplated gold structural material and an insulating layer of silicon dioxide. Silicon dioxide layer is deposited using plasma enhanced chemical vapour deposition (PECVD), to avoid a short circuit between the cantilever and the bottom electrode. The fabrication process involves six major steps designed under controlled experiments. These includes the plasma enhanced chemical vapour deposition of the silicon dioxide insulating layer, optical lithography to transfer photomask layer patterns, vacuum evaporation to deposit thin films of Titanium (Ti) and Gold (Au), electroplating of Au, the dry release of the cantilever beam arrays, and finally the wafer dicing to split the different micro devices. These process steps were each sub-detailed to give a total of fourteen micro-fabrication processes. Scanning electron microscope (SEM) images taken on the final fabricated device that was dry released using oxygen plasma ashing to avoid stiction, showed twelve freely suspended micro-cantilevered beams suspended with an average electrostatic gap of 2.29±0.17 microns above a 4934±3 angstrom thick silicon dioxide layer. Preliminary dimensional measurements on the fabricated devices revealed that the cantilevers were at least 52.06±1.93 microns wide with lengths varying from 377.97±0.01microns to 1491.89±0.01 microns, and were at least 2.21±0.05 microns thick. These results were validated by design values.
Starting Page	1
Ending Page	7
File Size	1094541
Page Count	7
File Format	PDF
e-ISBN	9781479960651
DOI	10.1109/IEOM.2015.7093891
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2015-03-03
Publisher Place	United Arab Emirates
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Micromechanical devices Fabrication Gold Particle beams Micro-Cantilever Gold electrodeposition Manufacturing process Resists MEMS Plasmas
Content Type	Text
Resource Type	Article

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1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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