NDLI: Design and simulation of low noise amplifier for RF front end at L band

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Content Provider	IEEE Xplore Digital Library
Author	Rajendran, J. Peter, R.
Copyright Year	2014
Description	Author affiliation: Centre of Excellence in Comput. Eng. & Networking, Amrita Sch. of Eng., Coimbatore, India (Peter, R.) \|\| Dept. of Electron. & Commun. Eng., Amrita Vishwa Vidyapeetham, Coimbatore, India (Rajendran, J.)
Abstract	In this paper, the design and evaluation of a low noise amplifier, that operates in the L-band, is being discussed. The amplifier was fabricated on FR-4 substrate. ATF-58143 Low Noise Enhancement Mode Pseudomorphic High Electron Mobility Transistor [HEMT] is used. The designed LNA is found to have a gain of 13 dB. The return loss is below -10 dB.
Starting Page	86
Ending Page	89
File Size	392650
Page Count	4
File Format	PDF
e-ISBN	9781479960132
DOI	10.1109/COMPSC.2014.7032626
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2014-12-17
Publisher Place	India
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Radio frequency Impedance matching Noise Scattering parameters Impedance Transistors Gain
Content Type	Text
Resource Type	Article

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Design and simulation of low noise amplifier for RF front end at L band