NDLI: A W-band down-conversion mixer in 90 nm CMOS with excellent matching and port-to-port isolation for automotive radars

Content Provider	IEEE Xplore Digital Library
Author	Yo-Sheng Lin Guo-Hao Li
Copyright Year	2014
Description	Author affiliation: Dept. of Electr. Eng., Nat. Chi Nan Univ., Puli, Taiwan (Yo-Sheng Lin; Guo-Hao Li)
Abstract	A W-band double-balanced down-conversion mixer for automotive radars using standard 90 nm CMOS technology is reported. The mixer comprises a double-balanced Gilbert cell with inductive source-degeneration RF transconductance stage for RF-port input matching bandwidth and conversion gain (CG) enhancement, a Marchand balun for converting the single RF input signal to differential signal, a Marchand balun for converting the single LO input signal to differential signal, and a baseband amplifier. The mixer consumes 13 mW and achieves excellent RF-port input reflection coefficient of -13.1~ -19.4 dB and LO-port input reflection coefficient of -9.1~ -11.8 dB for frequencies of 75~85 GHz. In addition, for frequencies of 75~85 GHz, the mixer achieves CG of -1~1.5 dB, LO-RF isolation of 43.5~49.2 dB, LO-IF isolation of 56.5~64.5 dB and RF-IF isolation of 35.9~39.4 dB, one of the best CG and port-to-port isolation results ever reported for a CMOS down-conversion mixer with operation frequency around 80 GHz.
Starting Page	54
Ending Page	58
File Size	496301
Page Count	5
File Format	PDF
ISBN	9781479958634
DOI	10.1109/ISWCS.2014.6933319
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2014-08-26
Publisher Place	Spain
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Noise figure Conversion gain Down-conversion mixer Frequency measurement Mixers Radio frequency Marchand balun CMOS Power measurement Impedance matching W-band Isolation CMOS integrated circuits Reflection coefficient
Content Type	Text
Resource Type	Article

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

W-band low power sub-harmonic mixer IC in 130-nm SiGe BiCMOS

A 12.1 mW 50∼67 GHz up-conversion mixer with 6 dB conversion gain and 30.7 dB LO-RF isolation in 90 nm CMOS

A 30–65 GHz reduced-size modulator with low LO power using sub-harmonic pumping in 90-nm CMOS technology

13.6 mW 79 GHz CMOS Up-Conversion Mixer With 2.1 dB Gain and 35.9 dB LO-RF Isolation

X-Band receiver front-end in fully depleted SOI technology

A low LO power V-band Gilbert-cell down-conversion mixer using 90 nm CMOS technology

A K-band SiGe BiCMOS fully integrated up-conversion mixer

A low power and high conversion gain 77∼81 GHz double-balanced up-conversion mixer with excellent LO-RF isolation in 90 nm CMOS

V-band dual-conversion down-converter with Schottky-diode ring-mixer using 0.35μm SiGe BiCMOS process

A W-band down-conversion mixer in 90 nm CMOS with excellent matching and port-to-port isolation for automotive radars

Similar Documents

W-band low power sub-harmonic mixer IC in 130-nm SiGe BiCMOS

A 12.1 mW 50∼67 GHz up-conversion mixer with 6 dB conversion gain and 30.7 dB LO-RF isolation in 90 nm CMOS

A 30–65 GHz reduced-size modulator with low LO power using sub-harmonic pumping in 90-nm CMOS technology

13.6 mW 79 GHz CMOS Up-Conversion Mixer With 2.1 dB Gain and 35.9 dB LO-RF Isolation

X-Band receiver front-end in fully depleted SOI technology

A low LO power V-band Gilbert-cell down-conversion mixer using 90 nm CMOS technology

A K-band SiGe BiCMOS fully integrated up-conversion mixer

A low power and high conversion gain 77∼81 GHz double-balanced up-conversion mixer with excellent LO-RF isolation in 90 nm CMOS

V-band dual-conversion down-converter with Schottky-diode ring-mixer using 0.35μm SiGe BiCMOS process

A W-band down-conversion mixer in 90 nm CMOS with excellent matching and port-to-port isolation for automotive radars