NDLI: Neutron irradiation and annealing temperature effects of CZ-Silicon

Content Provider	IEEE Xplore Digital Library
Author	Nadjet, O. Ahmed, B. Abdelhak, C.
Copyright Year	2015
Description	Author affiliation: Res. Nucl. Center of Birnie, Ain Oussera, Algeria (Nadjet, O.) \|\| Dept. of Phys., Univ. of Setif, Setif, Algeria (Ahmed, B.) \|\| Res. Center for Semicond. Technol. Energetic, Merveilles, Algeria (Abdelhak, C.)
Abstract	In the present work, we have irradiated p-type CZ-silicon at two different neutron fluences, 1.98 $×10^{18}$ and 3.96 $×10^{18}$ $n/cm^{2}.$ The optical properties and irradiation damage have been investigated using Fourier Transform Infrared spectroscopy (FTIR) and UV-VIS spectrophotometer technique at room temperature. The results show that the density of the vacancy-oxygen complex VO center (830 $cm^{-1})$ increases with increasing neutron fluence. Further, the creation of the divacancy defect (1.8 μm) concentration and the near edge absorption was formed after irradiation. The results from annealing indicate that near-edge absorption, VO defects disappear at 550 °C. However, another band around 825 $cm^{-1}$ was formed at the same temperature. The near-edge absorption and the band of 1.8μm have not been detected at 550 °C, and new bands near 1.4 and 1.7μm appeared. It is reasonable to assume that the two bands may be due to the divacancy consisting one or more lithium impurity atoms. The existence of these bands confirms that the transmutation of the boron to the lithium atoms can be attained in the neutron fluences available at the reactor Es Salem. It was concluded that the cluster defects induced by the neutron irradiation can be attributed to the vacancy-rich region which reordered after annealing treatment.
Starting Page	1
Ending Page	4
File Size	388239
Page Count	4
File Format	PDF
ISBN	9781467365833
e-ISBN	9781467365840
DOI	10.1109/WSMEAP.2015.7338207
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2015-06-11
Publisher Place	Tunisia
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Radiation effects Annealing Absorption Neutron fluence Lattices FTIR Neutrons Lithium Silicon Defects
Content Type	Text
Resource Type	Article

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