NDLI: Electrical Characterization and Source-Drain Voltage Dependent Mobility of P-Channel Organic Field-Effect Transistors Using MATLAB Simulation

Content Provider	IEEE Xplore Digital Library
Author	Farok, U. Falinie, Y. Alias, A. Gosh, B. Saad, I. Mukifza, A. Anuar, K.
Copyright Year	2013
Description	Author affiliation: Nano Eng. & Mater. Res. Group, Univ. Malaysia Sabah, Kota Kinabalu, Malaysia (Farok, U.; Falinie, Y.; Alias, A.; Gosh, B.; Saad, I.; Mukifza, A.; Anuar, K.)
Abstract	We demonstrate fabrication of bottom gate/top source-drain contacts for p-channel (small molecule) organic field-effect transistor (OFET) using pentacene as an active semiconductor layer and silicon dioxide (SiO2) as gate dielectric. The device exhibits a typical output curve of a field-effect transistor (FET). Furthermore, analysis of electrical characterization was done to investigate the source-drain voltage (Vds) dependent mobility. The mobility which calculated using MATLAB simulation exhibited a range from 0.0234 to 0.0258 cm2/Vs with increasing source-drain voltage (average mobility was 0.0254 cm2/Vs). This work suggests that the mobility increase with increasing source-drain voltage similar to the gate voltage dependent mobility phenomenon.
Starting Page	459
Ending Page	461
File Size	582499
Page Count	3
File Format	PDF
e-ISBN	9781479932511
DOI	10.1109/AIMS.2013.83
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2013-12-03
Publisher Place	Malaysia
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Pentacene P-channel OFETs Logic gates Mobility Organic field-effect transistor Dielectrics MATLAB
Content Type	Text
Resource Type	Article

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