NDLI: Active enhanced tunable high-Q on-chip E-band resonators in 130nm SiGe BiCMOS

Content Provider	IEEE Xplore Digital Library
Author	Singh, Nishant Stander, Tinus
Copyright Year	2015
Description	Author affiliation: Carl and Emily Fuchs Institute for Microelectronics, Dept. EEC Engineering, University of Pretoria, Pretoria, South Africa (Singh, Nishant; Stander, Tinus)
Abstract	A simulation study of a high-Q resonator in a commercial 130nm SiGe BiCMOS process for E-band frequencies is presented. The resonator is a planar quarter-wave microstrip resonator that uses a HBT based negative resistance circuit to counter losses and enhance the unloaded Q-factor. Using 3D EM (FEM) and circuit co-simulation, enhanced unloaded Q-factors of up to 892 are shown at a frequency of 83.5 GHz compared to the unenhanced unloaded Q-factor of 7. The negative resistance circuit sufficiently compensates for low Q-factors of the planar resonator and the varactor. The resonator is also shown to be continuously tunable in frequency from 82 to 84 GHz, and in unloaded Q-factor from 7 to 892, whilst maintaining unconditional stability in all tuning states.
Starting Page	201
Ending Page	204
File Size	184554
Page Count	4
File Format	PDF
ISSN	23779152
e-ISBN	9781509001576
DOI	10.1109/IMaRC.2015.7411403
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2015-12-10
Publisher Place	India
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Resistance Q measurement Resonant frequency BiCMOS integrated circuits Millimeter wave integrated circuits Millimeter wave communication Resonators Heteroj unction bipolar transistors Tuning Silicon germanium
Content Type	Text
Resource Type	Article

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

SiGe BiCMOS technology for mm-wave systems

High-speed SiGe BiCMOS technologies for applications beyond 100 GHz

High-Speed SiGe BiCMOS Technologies: 120-nm Status and End-of-Roadmap Challenges

Si/SiGe HBTs for Millimeter-wave BiCMOS Technologies

A BiCMOS Technology Featuring a 300/330 GHz (fT/fmax) SiGe HBT for Millimeter Wave Applications

A 130nm SiGe BiCMOS technology for mm-Wave applications featuring HBT with f of 260/320 GHz

Novel Collector Structure Enabling Low-Cost Millimeter-Wave SiGe:C BiCMOS Technology

0.13μm SiGe BiCMOS technology for mm-wave applications

Half-Terahertz SiGe BiCMOS technology

Active enhanced tunable high-Q on-chip E-band resonators in 130nm SiGe BiCMOS

Similar Documents

SiGe BiCMOS technology for mm-wave systems

High-speed SiGe BiCMOS technologies for applications beyond 100 GHz

High-Speed SiGe BiCMOS Technologies: 120-nm Status and End-of-Roadmap Challenges

Si/SiGe HBTs for Millimeter-wave BiCMOS Technologies

A BiCMOS Technology Featuring a 300/330 GHz (fT/fmax) SiGe HBT for Millimeter Wave Applications

A 130nm SiGe BiCMOS technology for mm-Wave applications featuring HBT with f of 260/320 GHz

Novel Collector Structure Enabling Low-Cost Millimeter-Wave SiGe:C BiCMOS Technology

0.13μm SiGe BiCMOS technology for mm-wave applications

Half-Terahertz SiGe BiCMOS technology

Active enhanced tunable high-Q on-chip E-band resonators in 130nm SiGe BiCMOS