NDLI: Monolayer strain by NEMS for low power application

Content Provider	IEEE Xplore Digital Library
Author	Almeida, S. Zubia, D.
Copyright Year	2015
Description	Author affiliation: Electr. & Comput. Eng., Univ. of Texas at El Paso, El Paso, TX, USA (Almeida, S.; Zubia, D.)
Abstract	Summary form only given. In recent years, two dimensional (2D) materials have attracted much attention due to its potential to overcome the roadblocks of electronics miniaturization and follow Moore's law. These materials consist of atoms covalently bonded along one plane and weakly bonded with its neighboring planes via van der Waal forces [1]. This property allows these materials to be mechanically cleaved or exfoliated in mono- or multilayers. Graphene is one of the most studied 2D materials due to its high mobility, strength and flexibility. But the lack of a band gap of this semi-metal material has limited its application in digital electronics [2]. Fortunately the transition-metal di-chalcogenides (TMD) in the form of 2D layers have been shown to possess a band gap. One example is $MoS_{2}$ which consists of one plane of Mo atoms sandwiched between two planes of S atoms. Interestingly, the band gap in $MoS_{2}$ monolayers and multilayers can be modulated by mechanical strain as reported theoretically [3] and experimentally [4]. A 1.9% compressive strain increases the band gap from 1.73 eV to 1.86 eV and changes it from direct to indirect. Moreover, an 11% tensile strain causes the band gap energy to be zero; essentially making the $MoS_{2}$ to transition from semiconductor to metallic [3]. The demonstrations of heterojunctions with useful electronic properties [5] and even MOSFET devices [2] have illuminated the potential of $MoS_{2}$ to create electronic devices beyond CMOS. However the strain effect on the band gap of $MoS_{2}$ has not been fully explored for electro-mechanical devices. For example nano-electromechanical (NEM) switches offer an avenue for low-power electronics due to their minimal or zero “off” current and steep switching. However, two significant problems in the NEMs devices are mechanical fatigue and the adhesive force between the contacts. In this work, a $MoS_{2}$ monolayer is used in a NEMs cantilever to achieve a low-voltage switching device that exploits the strain effect on the band gap. Essentially the NEMs cantilever strains the $MoS_{2}$ monolayer and causes its bandgap to change from semiconducting to conducting.
Starting Page	1
Ending Page	2
File Size	2622279
Page Count	2
File Format	PDF
ISBN	9781467385688
DOI	10.1109/E3S.2015.7336807
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2015-10-01
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Electric potential Photonic band gap Nanoelectromechanical systems Force Logic gates Nonhomogeneous media Strain
Content Type	Text
Resource Type	Article

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

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