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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Wen-Ching Hsieh Lee, H.-T.D. Fuh-Cheng Jong Shich-Chuan Wu Heh, D. |
| Copyright Year | 2013 |
| Description | Author affiliation: ETOMS Electron. Corp, Taiwan (Lee, H.-T.D.) || Dept. of Opto-Electron. Syst. Eng., Minghsin Univ. of Sci. & Technol., Hsin-Chu, Taiwan (Wen-Ching Hsieh) || Nat. Nano Device Labs., Tainan, Taiwan (Shich-Chuan Wu; Heh, D.) || Southern Taiwan Univ. of Technol., Tainan, Taiwan (Fuh-Cheng Jong) |
| Abstract | The silicon-oxide-nitride-oxide-silicon (SONOS) capacitor devices can be candidates for nonvolatile ultraviolet UV radiation sensors. In the case of SONOS type UV radiation sensors, the UV radiation induces a significant increase of threshold voltage for SONOS by UV-assisted-low-gate-voltage program. The change of threshold voltage for SONOS after UV ray expose has a correlation to the dose of UV ray exposure. In this paper, the performance of capacitor types of SONOS used for UV sensor was studied. The data of SONOS UV radiation sensors wrote by UV-assisted-low-gate-voltage program was nonvolatile at least for 1 month. The SONOS capacitor device with ONO gate dielectric in this study has demonstrated the feasibility for UV nonvolatile sensor application. |
| Starting Page | 163 |
| Ending Page | 164 |
| File Size | 221143 |
| Page Count | 2 |
| File Format | |
| e-ISBN | 9781479904655 |
| DOI | 10.1109/ICAIT.2013.6621548 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2013-07-06 |
| Publisher Place | Taiwan |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | SONOS devices SONOS Electron traps Ultraviolet radiation Capacitors Logic gates Threshold voltage Capacitor Photonics Sensor |
| Content Type | Text |
| Resource Type | Article |
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