NDLI: The electrical characteristics of metal-ferroelectric (PbZr/sub x/Ti/sub 1-x/O/sub 3/)-insulator(Ta/sub 2/O/sub 5/)-silicon structure for non-volatile memory applications

Content Provider	IEEE Xplore Digital Library
Author	Chi-Yuan Sze Lee, J.Y.
Copyright Year	2000
Description	Author affiliation: Dept. of Electr. Eng., Tsinghua Univ., Beijing, China (Chi-Yuan Sze)
Abstract	A metal ferroelectric insulator-silicon (MFIS) structure using lead-zirconate-titanate (PZT) as the ferroelectric layer and Ta/sub 2/O/sub 5/ as the insulator layer is fabricated. This structure is studied for the potential application of nonvolatile memory devices. High frequency C-V measurements show a flat band voltage shift of 13 V under a /spl plusmn/15 V writing pulse. The interface-trap density D/sub it/ is measured by the conductance method. The MFIS capacitors are shown to have a fatigue lifetime of 1/spl times/10/sup 11/ cycles and 5/spl times/10/sup 7/ cycles for 11.4 V and 15 V writing pulses, respectively.
Starting Page	349
Ending Page	352
File Size	204032
Page Count	4
File Format	PDF
ISBN	0780358147
DOI	10.1109/SIM.2000.939259
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2000-07-03
Publisher Place	Australia
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Insulation Pulse measurements Nonvolatile memory Ferroelectric materials Capacitance-voltage characteristics Voltage Electric variables Writing Metal-insulator structures Frequency measurement
Content Type	Text
Resource Type	Article

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The electrical characteristics of metal-ferroelectric (PbZr/sub x/Ti/sub 1-x/O/sub 3/)-insulator(Ta/sub 2/O/sub 5/)-silicon structure for non-volatile memory applications