NDLI: Quantum transport in ultra-scaled phosphorous-doped silicon nanowires

Content Provider	IEEE Xplore Digital Library
Author	Hoon Ryu Lee, S. Weber, B. Mahapatra, S. Simmons, M.Y. Hollenberg, L.C.L. Klimeck, G.
Copyright Year	2010
Description	Author affiliation: Network for Computational Nanotechnology, Purdue University, West Lafayette, IN 47907, USA (Hoon Ryu; Lee, S.; Klimeck, G.) \|\| School of Physics, University of New South Wales, Sydney, 2052, Australia (Weber, B.; Mahapatra, S.; Simmons, M.Y.) \|\| School of Physics, University of Melbourne, Parkville VIC 3010, Australia (Hollenberg, L.C.L.)
Abstract	Highly phosphorous-doped nanowires in silicon (Si:P NW) represent the ultimate nanowire scaling limit of 1 atom thickness and a few atoms width. Experimental data are compared to an atomistic full-band model. Charge-potential self-consistency is computed by solving the exchange-correlation LDA corrected Schrödinger-Poisson equation. Transport through donor bands is observed in [110] Si:P NW at low temperature. The semi-metallic conductance computed in the ballistic regime agrees well with the experiment. Sensitivity of the NW properties on doping constant and placement disorder on the channel is addressed. The modeling confirms that the nanowires are semi-metallic and transport can be gate modulated.
Starting Page	1
Ending Page	2
File Size	933990
Page Count	2
File Format	PDF
ISBN	9781424477272
e-ISBN	9781424477265
DOI	10.1109/SNW.2010.5562585
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2010-06-13
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	DVD Doping Logic gates Silicon Semiconductor process modeling Nanowires Physics
Content Type	Text
Resource Type	Article

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