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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Arshad, T.S.M. Othman, M.A. Yasin, N.Y.M. Taib, S.N. Ismail, M.M. Napiah, Z.A.F.M. Sulaiman, H.A. Hussain, M.N. Said, M.A.M. Misran, M.H. Ramlee, R.A. |
| Copyright Year | 2013 |
| Description | Author affiliation: Centre for Telecommun. Res. & Innovation (CeTRI), Univ. Teknikal Malaysia Melaka, Durian Tunggal, Malaysia (Arshad, T.S.M.; Othman, M.A.; Yasin, N.Y.M.; Taib, S.N.; Ismail, M.M.; Napiah, Z.A.F.M.; Sulaiman, H.A.; Hussain, M.N.; Said, M.A.M.; Misran, M.H.; Ramlee, R.A.) |
| Abstract | This paper presents comparison on IV Characteristics analysis between Silicon and InGaAs PIN Photodiode. PIN Photodiode is a structure that is consists of positive region, intrinsic region and negative region (PIN). The thick intrinsic regions are a difference to a normal PN Photodiode. PIN Photodiodes practical as Photodetectors, Attenuators and Radio frequency (RF) switches. The simple, low cost yet rugged structure of PIN Photodiodes is an advantage in Photodiode technology. These papers are separated in several section consists of the basic principle, characteristics, advantages and the recent technologies of PIN Photodiode. There will be a specific section on comparison between Indium Gallium Arsenide (InGaAs) PIN Photodiode with Silicon (Si) PIN Photodiode. |
| Starting Page | 70 |
| Ending Page | 75 |
| File Size | 510369 |
| Page Count | 6 |
| File Format | |
| e-ISBN | 9781479916504 |
| DOI | 10.1109/ICICI-BME.2013.6698467 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2013-11-07 |
| Publisher Place | Indonesia |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | PIN Photodiode PIN photodiodes Indium gallium Arsenide (InGaAs) Noise IV Characteristics Doping Silicon Indium gallium arsenide Silicon (Si) |
| Content Type | Text |
| Resource Type | Article |
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