NDLI: Methodology for ternary CdxZn1−xS deposition by chemical bath

Content Provider	IEEE Xplore Digital Library
Author	Rojas, J. Oliva, A.I.
Copyright Year	2013
Description	Author affiliation: Dept. de Fis. Aplic., IPN-Unidad Merida, Mérida, Mexico (Rojas, J.; Oliva, A.I.)
Abstract	Deposition of semiconductor materials by the chemical bath technique has impulsed to reconsider the production of solar cells at industrial scale. The simplicity and low cost of this deposition technique makes it attractive for thin film solar cells production. The CdS and ZnS semiconductors are extensively studied by this technique due to their optical properties as filter or anti-reflective layers. While the band gap energy of CdS is 2.42 eV, ZnS reports a value of 3.70 eV. A technological challenge is to prepare a ternary $Cd_{x}Zn_{1-x}S$ material that allows us to tune the band gap energy between 2.42 and 3.70 eV, by controlling the x concentration using the chemical bath technique. This work presents two methodologies for preparing this ternary material as a thin layer. For deposition, the chemical bath consists of $ZnCl_{2},$ $SC(NH_{2})_{2},$ and $CdCl_{2}$ chemical reagents as carriers of ions $(Cd^{2+},$ $Zn^{2+}$ and $S^{2-});$ $NH_{4}NO_{3}$ as complexing agent, and KOH for pH control. The methodologies for films preparation and their optical, morphological, and structural properties are discussed. XRD analysis shows that ternary material is composed of Zn, Cd and S in a hexagonal structure oriented in the (111) preferential with a mean band gap energy value of 2.50 eV. SEM images on samples show nanoflowers formation. The atomic concentrations of Zn, Cd and S as obtained with EDS and XPS techniques confirm the ternary material formation.
Starting Page	435
Ending Page	439
File Size	2606613
Page Count	5
File Format	PDF
e-ISBN	9781479914616
DOI	10.1109/ICEEE.2013.6676043
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2013-09-30
Publisher Place	Mexico
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Ternary compound Semiconductor CdxZn1−xS
Content Type	Text
Resource Type	Article

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