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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Cerdeira, A. Estrada, M. Iniguez, B. Soto, S. |
| Copyright Year | 2011 |
| Description | Author affiliation: Departament dÉnginyeria Electronica Electrica i Automatica, Universitat Rovira i Virgili, Avda. PaisosCatalans 26,43007, Tarragona, España (Iniguez, B.) || Sección de Electrónica del Estado Sólido, Departamento de Ingeniería Eléctrica, CINVESTAV, Av. IPN No. 2508, 07360, D.F., México (Cerdeira, A.; Estrada, M.) || Benemérita Universidad Autónoma de Puebla, CiDS-ICBUAP, Ciudad Universitaria, edif 103D, México (Soto, S.) |
| Abstract | This paper presents the expressions and procedure for precise and simple modeling of the subthreshold region of OTFTs. The total drain current in the OTFT is calculated as the sum of two components, one calculated in above threshold regime plus the one corresponding to the below threshold regime. The tanh function is used to sew both regions. Good agreement between measured and modeled characteristics is shown in two OTFTs, one of tip pentacene and another of F8T2. |
| Starting Page | 1 |
| Ending Page | 4 |
| File Size | 202453 |
| Page Count | 4 |
| File Format | |
| ISBN | 9781457710117 |
| e-ISBN | 9781457710131 |
| DOI | 10.1109/ICEEE.2011.6106681 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2011-10-26 |
| Publisher Place | Mexico |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Polymeric TFT Pentacene Temperature dependence Solid modeling Voltage measurement Organic TFT TFT Subthreshold region modeling TFT modeling Logic gates Organic thin film transistors |
| Content Type | Text |
| Resource Type | Article |
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