NDLI: Microscopic study on the carrier distribution in optoelectronic device structures: Experiment and modeling

Content Provider	IEEE Xplore Digital Library
Author	Huang, Wenchao Xia, Hui Wang, Shaowei Deng, Honghai Wei, Peng li, Lu Liu, Fengqi Li, Zhifeng Li, Tianxin
Copyright Year	2011
Description	Author affiliation: National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Science, China (Huang, Wenchao; Xia, Hui; Wang, Shaowei; Li, Zhifeng; Li, Tianxin) \|\| Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, No.A35 QingHua East Road, Beijing, China 100083 (li, Lu; Liu, Fengqi) \|\| Detective Assembly Technology Department, Shanghai Institute of Technical Physics, Chinese Academy of Science. No.500 Yu Tian Road, China 200083 (Deng, Honghai; Wei, Peng)
Abstract	Scanning capacitance microscopy (SCM) and scanning spreading resistance microscopy (SSRM) both are capable of mapping the 2-demensional carrier distribution in semiconductor device structures, which is essential in determining their electrical and optoelectronic performances. In this work, cross-sectional $SCM^{1,2}$ is used to study the InGaAs/InP P-i-N junctions prepared by area-selective p-type diffusion. The diffusion lengths in the depth as well as the lateral directions are obtained for junctions under different window sizes in mask, which imply that narrow windows may result in shallow p-n junctions. The analysis is beneficial to design and fabricate focal plane array of near infrared photodetectors with high duty-cycle and quantum efficiency. On the other hand, SSRM provides unparalleled spatial resolution (<10 nm) in electrical $characterization^{3}$ that is demanded for studying low-dimensional structures. However, to derive the carrier density from the measured local conductance in individual quantum structures, reliable model for SSRM is necessary but still not well established. Based on the carrier concentration related transport mechanisms, i.e. thermionic emission and thermionic field $emission^{4,5},$ we developed a numerical model for the tip-sample Schottky $contact^{4}.$ The calculation is confronted with SSRM study on the dose-calibrated quantum wells (QWs).
Starting Page	1
Ending Page	7
File Size	1138079
Page Count	7
File Format	PDF
ISBN	9780819489616
ISSN	21621098
DOI	10.1117/12.904389
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2011-11-13
Publisher Place	China
Access Restriction	Subscribed
Rights Holder	SPIE
Subject Keyword	Scanning spreading resistance microscopy Microscopy Scanning capacitance microscopy Quantum wells Abstracts Photodetectors Indium gallium arsenide Carrier distribution Slective-area diffusion Photodetector Indium phosphide
Content Type	Text
Resource Type	Article

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