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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Cesur, E. Tangel, A. |
| Copyright Year | 2013 |
| Description | Author affiliation: TUBITAK BILGEM UEKAE, Gebze, Turkey (Cesur, E.) || Dept. of. Electron. & Commun. Eng., Kocaeli Univ., Izmit, Turkey (Tangel, A.) |
| Abstract | In this paper, the physical structure, application areas, and design details of PIN diodes highlighted from the literature are summarized. Moreover, the YITAL 0.25μ SiGe HBT process compatible PIN diode to be used in X-Band transmitter/receiver circuits and monolithic microwave integrated circuit applications is designed using TCAD design tools. Additionally, effects of PIN diode geometry to its performance are also addressed. The anode area of the designed PIN is 16 $μm^{2}$ with square geometry. In addition to above studies, it is suggested to use of guard ring, deep trench isolation, and also a boron implantation under the bottom of each deep trench isolation well due to their positive effects on diode isolation parameters. Some important SPICE parameters are also extracted from the designed PIN diode using the completed DC and AC simulations. The related simulation results and calculations are also given in the paper together with discussions and future works. |
| Starting Page | 398 |
| Ending Page | 403 |
| File Size | 353136 |
| Page Count | 6 |
| File Format | |
| e-ISBN | 9786050105049 |
| DOI | 10.1109/ELECO.2013.6713870 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2013-11-28 |
| Publisher Place | Turkey |
| Access Restriction | Subscribed |
| Rights Holder | The Chamber of Turkish Electrical Engineers-Bursa |
| Subject Keyword | Geometry Fabrication Radio frequency PIN photodiodes Heterojunction bipolar transistors Anodes Silicon germanium |
| Content Type | Text |
| Resource Type | Article |
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