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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Saci, L. Mahamdi, R. Mansour, F. Temple-Boyer, P. |
| Copyright Year | 2009 |
| Description | Author affiliation: 3CNRS; LAAS; 7 avenue du colonel Roche, F-31077 Toulouse, France (Temple-Boyer, P.) || LEMEAMED Laboratory, Department of Electronics University Mentouri Constantine 25000, Algeria (Saci, L.; Mansour, F.) || Department of Electronics University Hadj Lakhdar Batna, 05000, Algeria (Mahamdi, R.) |
| Abstract | The present paper focuses on the study of electrical and physico-chemical properties of films deposited by Low Pressure Chemical Vapor Deposition or (LPCVD). These films are composed of two layers, boron doped polysilicon (polySi) and nitrogen doped polysilicon (NIDOS). The results indicate that the resistivity values increases versus increasing of the annealing duration, this can be explained by the formation of B-N complex. However, Fourier Transformation Infrared Spectroscopy Analyses (FTIR) results show, the increase of the absorbance intensity of B-N complex with increasing of annealing duration. Therefore, the formation of B-N bond tends to degrade the electrical properties of polySi/NIDOS by the decrease electrically active boron density in polycrystalline. |
| File Size | 195470 |
| File Format | |
| ISBN | 9781424451067 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2009-11-05 |
| Publisher Place | Turkey |
| Access Restriction | Subscribed |
| Rights Holder | IEEE and the Chamber of Turkish Electrical Engineers |
| Subject Keyword | Semiconductor films Annealing Boron Resistivity Conductivity Silicon Infrared spectra Nitrogen Bond Probes Chemical vapor deposition Bonding |
| Content Type | Text |
| Resource Type | Article |
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