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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Hui Zhang Tolbert, L.M. Ozpineci, B. Chinthavali, M.S. |
| Copyright Year | 2006 |
| Description | Author affiliation: Electr. & Comput. Eng., Tennessee Univ., Knoxville, TN (Hui Zhang; Tolbert, L.M.) |
| Abstract | The purpose of this work is to provide validated models to estimate the performance of a SiC-based converter as a utility interface in battery systems. System design and modeling are described in detail. Simulations are done for both a SiC JFET converter and its Si counterpart based on the quality of tested devices. The simulation results indicate that in both charging and discharging modes, the SiC converter has a better performance compared to the Si one. (1) With the same heatsink size and ambient temperature, great advantages in efficiency and junction temperatures were found in the SiC-based converter. (2) With the same thermal limit, large savings in system weight and volume combined with a high efficiency were found in the SiC-based converter |
| Sponsorship | IEEE Ind. Appl. Soc. IEEE Florida West Coast Sect |
| Starting Page | 346 |
| Ending Page | 350 |
| File Size | 293867 |
| Page Count | 5 |
| File Format | |
| ISBN | 1424403642 |
| ISSN | 01972618 |
| DOI | 10.1109/IAS.2006.256544 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2006-10-08 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Inverter Temperature Costs JFET Power electronics Batteries Power system modeling Silicon carbide (SiC) Modeling Pulse width modulation inverters Pulse width modulation converters Silicon carbide Voltage Battery Thermal conductivity Schottky diode |
| Content Type | Text |
| Resource Type | Article |
| Subject | Industrial and Manufacturing Engineering Control and Systems Engineering Electrical and Electronic Engineering |
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