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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Azar, R. Udrea, F. De Silva, M. Amaratunga, G. Ng, W.T. Dawson, F. Findlay, W. Waind, P. |
| Copyright Year | 2002 |
| Description | Author affiliation: Dept. of Eng., Cambridge Univ., UK (Azar, R.; Udrea, F.; De Silva, M.; Amaratunga, G.) |
| Abstract | An enhanced IGBT model based on the Kraus model with new derivations based on an extra parameter accounting for p-i-n injection was developed to allow simulation of both trench and DMOS IGBT structures. Temperature dependence was also implemented in the model. The model was validated against steady state and transient measurements done on an 800 A, 1.7 kV Dynex IGBT module at 25/spl deg/C and 125/spl deg/C. The Spice model has also shown excellent agreement with mixed mode MEDICI simulations. The Spice model also takes into account for the first time the parasitic thyristor effect allowing the DC and dynamic temperature dependent latchup modeling of power modules as well as their temperature dependent safe operating area. |
| Starting Page | 2433 |
| Ending Page | 2436 |
| File Size | 378294 |
| Page Count | 4 |
| File Format | |
| ISBN | 0780374207 |
| ISSN | 01972618 |
| DOI | 10.1109/IAS.2002.1042786 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2002-10-13 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Insulated gate bipolar transistors Temperature dependence Thyristors PIN photodiodes Medical simulation SPICE Steady-state Equations Cathodes Power engineering and energy |
| Content Type | Text |
| Resource Type | Article |
| Subject | Industrial and Manufacturing Engineering Control and Systems Engineering Electrical and Electronic Engineering |
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