NDLI: High voltage dual-gate turn-off thyristors

Content Provider	IEEE Xplore Digital Library
Author	Apeldoorn, O. Steimer, P. Streit, P. Carroll, E. Weber, A.
Copyright Year	2001
Abstract	The quest of the last ten years for high power snubberless semiconductor switches has resulted in IGCTs (integrated gate-commutated thyristors) and IGBTs (insulated-gate bipolar transistors) currently available up to 6 kV. Both devices have inherently short switching times but are nevertheless frequency limited by their switching losses. 10 kV IGCTs have been shown to be useable up to about 5.5 kV/sub DC/ and 400 Hz. However market needs for PWM (pulse width modulation) at about 1 kHz cannot be satisfied above 3 kV DC, due to the inherent turn-off losses of the aforementioned bipolar components. The fundamental barrier presented by the charge stored in the n-base of IGBTs and IGCTs must be reduced at turn-off without increasing conduction losses. The use of a second, anode-side gate (n-gate) to reduce the high plasma density at turn-off has already been described for conventional snubbered GTOs but the technique has not yet been applied to a snubberless device such as the IGCT. This paper shows the turn-off loss reductions which can be obtained by "grafting" a second gate to the conventional IGCT and compares these results to those of a new type designed specifically for "gate-assisted turn-off".
Starting Page	1485
Ending Page	1489
File Size	1058565
Page Count	5
File Format	PDF
ISBN	0780371143
ISSN	01972618
DOI	10.1109/IAS.2001.955731
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2001-09-30
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Insulated gate bipolar transistors Space vector pulse width modulation Thyristors Insulation Switching loss Voltage Pulse width modulation Frequency Plasma density Power semiconductor switches
Content Type	Text
Resource Type	Article
Subject	Industrial and Manufacturing Engineering Control and Systems Engineering Electrical and Electronic Engineering

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